SUT462N Datasheet, PDF (2/4 Pages) AUK corp – Epitaxial planar NPN/PNP silicon transistor

Absolute Maximum Ratings [Tr1, Tr2]
Characteristic
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
※: Total rating
V_CBO
V_CEO
V_EBO
I_C
P_C^※
T_J
T_stg
Rating
Tr1 Tr2
60
-50
50
-50
5
-5
150
-150
300
150
-55~150
SUT462N
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics [Tr1]
Characteristic
Symbol
Collector-emitter breakdown voltage BV_CEO
Collector cut-off current
I_CBO
Emitter cut-off current
I_EBO
DC current gain
h_FE
Collector-emitter saturation voltage
V_CE(sat)
Base-emitter voltage
V_BE
Transition frequency
f_T
Collector output capacitance
C_ob
Test Condition
I_C=1mA, I_B=0
V_CB=60V, I_E=0
V_EB=5V, I_C=0
V_CE=6V, I_C=2mA
I_C=100mA, I_B=10mA
V_CE=6V, I_C=2mA
V_CE=10V, I_C=10mA
V_CB=10V, I_E=0, f=1MHz
Electrical Characteristics [Tr2]
Characteristic
Symbol
Collector-emitter breakdown voltage BV_CEO
Collector cut-off current
I_CBO
Emitter cut-off current
I_EBO
DC current gain
h_FE
Collector-emitter saturation voltage
V_CE(sat)
Base-emitter voltage
V_BE
Transition frequency
f_T
Collector output capacitance
C_ob
Test Condition
I_C=-1mA, I_B=0
V_CB=-50V, I_E=0
V_EB=-5V, I_C=0
V_CE=-6V, I_C=-2mA
I_C=-100mA, I_B=-10mA
V_CE=-6V, I_C=-2mA
V_CE=-10V, I_C=-10mA
V_CB=-10V, I_E=0, f=1MHz
Min.
50
-
-
120
-
-
-
-
Typ.
-
-
-
-
-
0.65
200
2
(Ta=25°C)
Max. Unit
-
V
0.1
µA
0.1
µA
400
-
0.25
V
-
V
-
MHz
-
pF
(Ta=25°C)
Min. Typ. Max. Unit
-50
-
-
V
-
-
-0.1 µA
-
-
-0.1 µA
120
-
400
-
-
-
-0.3
V
- -0.65 -
V
-
200
-
MHz
-
4
-
pF
KSD-T5P002-000
2