SUT460M Datasheet, PDF (2/4 Pages) AUK corp – Epitaxial planar NPN silicon transistor

SUT460M
Absolute Maximum Ratings [Tr1, Tr2]
Characteristic
Symbol
Collector-base voltage
V_CBO
Collector-emitter voltage
V_CEO
Emitter-base voltage
V_EBO
Collector current
I_C
Collector power dissipation
P_C^※
Junction temperature
T_J
Storage temperature range
T_stg
※: Total rating
Rating
60
50
5
150
300
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics [Tr1, Tr2]
Characteristic
Symbol
Collector-emitter breakdown voltage BV_CEO
Collector cut-off current
I_CBO
Emitter cut-off current
I_EBO
DC current gain
h_FE
Collector-emitter saturation voltage
V_CE(sat)
Base-emitter voltage
V_BE
Transition frequency
f_T
Collector output capacitance
C_ob
Test Condition
I_C=1mA, I_B=0
V_CB=60V, I_E=0
V_EB=5V, I_C=0
V_CE=6V, I_C=2mA
I_C=100mA, I_B=10mA
V_CE=6V, I_C=2mA
V_CE=10V, I_C=10mA
V_CB=10V, I_E=0, f=1MHz
Min.
50
-
-
120
-
-
-
-
Typ.
-
-
-
-
-
0.65
200
2
(Ta=25°C)
Max. Unit
-
V
0.1
µA
0.1
µA
400
-
0.25
V
-
V
-
MHz
-
pF
KSD-T5O001-000
2