SUT394J Datasheet, PDF (2/4 Pages) AUK corp – Epitaxial planar NPN/PNP silicon transistor

SUT394J
Absolute Maximum Ratings [Tr1, Tr2]
(Ta=25°C)
Characteristic
Rating
Symbol
Unit
Tr1 Tr2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
※: Total rating
V_CBO
V_CEO
V_EBO
I_C
P_C^※
T_J
T_stg
60
-40
40
-40
6
-5
200
-200
200
150
-55~150
V
V
V
mA
mW
°C
°C
Electrical Characteristics [ Tr1 ]
Characteristic
Symbol
Test Condition
(Ta=25°C)
Min. Typ. Max. Unit
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Delay time
Rise time
Storage time
Fall Time
BV_CBO
BV_CEO
BV_EBO
I_CEX
h_FE
V_CE(sat)
f_T
C_ob
t_d
t_r
t_stg
t_f
I_C=10μA, I_E=0
I_C=1mA, I_B=0
I_E=10μA, I_C=0
V_CE=30V, V_EB=3V
V_CE=1V, I_C=10mA
I_C=50mA, I_B=5mA
V_CE=20V, I_C=10mA,
f=100MHz
V_CB=5V, I_E=0, f=1MHz
<
60
-
40
-
6
-
-
-
100
-
-
-
300
-
-
-
-
-
-
-
-
-
-
-
-
V
-
V
-
V
50
nA
300
-
0.3
V
-
MHz
4
pF
35
ns
35
ns
200
ns
50
ns
Electrical Characteristics [ Tr2 ]
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BV_CBO I_C=-10μA, I_E=0
Collector-Emitter breakdown voltage BV_CEO I_C=-1mA, I_B=0
Emitter-Base breakdown voltage
BV_EBO I_E=-10μA, I_C=0
Collector cut-off current
I_CEX
V_CE=-30V, V_EB=-3V
DC current gain
h_FE
V_CE=-1V, I_C=-10mA
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
V_CE(sat)
f_T
C_ob
I_C=-50mA, I_B=-5mA
V_CE=-20V, I_C=-10mA,
f=100MHz
V_CB=-5V, I_E=0, f=1MHz
Delay time
t_d
Rise time
t_r
Storage time
Fall Time
t_stg
<
t_f
KSD-T5S010-000
Min.
-40
-40
-5
-
100
-
Typ.
-
-
-
-
-
-
(Ta=25°C)
Max. Unit
-
V
-
V
-
V
-50
nA
300
-
-0.4
V
250
-
-
MHz
-
-
4.5
pF
-
-
35
ns
-
-
35
ns
-
-
225
ns
-
-
75
ns
2