SUT390J Datasheet, PDF (2/3 Pages) AUK corp – Epitaxial planar NPN silicon transistor

Absolute Maximum Ratings [Tr1, Tr2]
Characteristic
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
※: Total rating
V_CBO
V_CEO
V_EBO
I_C
P_C^※
T_J
T_stg
Rating
60
40
6
200
200
150
-55~150
SUT390J
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics [Tr1, Tr2]
(Ta=25°C)
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Delay time
Rise time
Storage time
Fall Time
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CEX
h_FE
V_CE(sat)
f_T
C_ob
t_d
t_r
t_stg
t_f
Test Condition
I_C=10μA, I_E=0
I_C=1mA, I_B=0
I_E=10μA, I_C=0
V_CE=30V, V_EB=3V
V_CE=1V, I_C=10mA
I_C=50mA, I_B=5mA
V_CE=20V, I_C=10mA,
f=100MHz
V_CB=5V, I_E=0, f=1MHz
Vcc=10V, Ic=10mA
IB1=-IB2=1mA^※
Min.
60
40
6
-
100
-
Typ.
-
-
-
-
-
-
Max.
-
-
-
50
300
0.3
300
-
-
-
-
4
-
-
35
-
-
35
-
-
200
-
-
50
Unit
V
V
V
nA
-
V
MHz
pF
ns
ns
ns
ns
※ Switching Time Test Circuit.
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KSD-T5S009-000
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