 English |
|
|
|
|
|
|
|
| SUR560J Datasheet, PDF (2/3 Pages) AUK corp – Epitaxial planar PNP silicon transistor | |||
| |||
| ◁ |
SUR560J
Absolute Maximum Ratings [Tr1, Tr2]
Characteristic
Output voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature range
â»: Total rating
Symbol
VO
VI
IO
PDâ»
TJ
Tstg
Rating
-50
-20, 10
-100
200
150
-55 ~ 150
(Ta=25°C)
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics [Tr1, Tr2]
Characteristic
Symbol
Output cut-off current
IO(OFF)
DC current gain
GI
Output voltage
VO(ON)
Input voltage (ON)
VI(ON)
Input voltage (OFF)
Transition frequency
VI(OFF)
fT*
Input current
II
Input resistor (Input to base)
R1
Input resistor (Base to common)
R2
* : Characteristic of transistor only
Test Condition
VO=-50V, VI=0
VO=-5V, IO=-10mA
IO=-10mA, II=-0.5mA
VO=-0.2V, IO=-5mA
VO=-5V, IO=-0.1mA
VO=-10V, IO=-5mA, f=1MHz
VI=-5V, IO=0
-
-
Min.
-
30
-
-
-1.0
-
-
3.3
3.3
Typ.
-
55
-0.1
-1.5
-1.2
200
-
4.7
4.7
(Ta=25°C)
Max. Unit
-500 nA
-
-
-0.3
V
-2.0
V
-
V
-
MHz
-1.8 mA
6.1
KΩ
6.1
KΩ
KSD-R5S021-000
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese