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| SUR552J Datasheet, PDF (2/4 Pages) AUK corp – Epitaxial planar NPN/PNP silicon transistor | |||
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Absolute Maximum Ratings [Tr1, Tr2]
Characteristic
Symbol
Output voltage
VO
Input voltage
VI
Output current
IO
Power dissipation
PDâ»
Junction temperature
TJ
Storage temperature Range
Tstg
â»: Total rating
SUR552J
Rating
Tr1
Tr2
50
-50
40,-10 -40,10
100
-100
200
150
-55 ~ 150
(Ta=25°C)
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics [Tr1]
Characteristic
Symbol
Test Condition
Output cut-off current
IO(OFF) VO=50V, VI=0
DC current gain
GI
VO=5V, IO=10mA
Output voltage
VO(ON) IO=10mA, II=0.5mA
Input voltage (ON)
VI(ON) VO=0.2V, IO=5mA
Input voltage (OFF)
Transition frequency
VI(OFF)
fT*
VO=5V, IO=0.1mA
VO=10V, IO=5mA, f=1MHz
Input current
II
VI=5V, IO=0
Input resistor (Input to base)
R1
-
Input resistor (Base to common)
R2
-
* : Characteristic of transistor only
(Ta=25°C)
Min. Typ. Max. Unit
-
-
500 nA
80 200
-
-
-
0.1 0.3
V
-
2.8 5.0
V
1.0 1.2
-
V
-
200
-
MHz
-
- 0.18
mA
33
47
61
KΩ
33
47
61
KΩ
Electrical Characteristics [Tr2]
Characteristic
Symbol
Output cut-off current
IO(OFF)
DC current gain
GI
Output voltage
VO(ON)
Input voltage (ON)
VI(ON)
Input voltage (OFF)
Transition frequency
Input current
VI(OFF)
fT*
II
Input resistor (Input to base)
R1
Input resistor (Base to common)
R2
* : Characteristic of transistor only
Test Condition
VO=-50V, VI=0
VO=-5V, IO=-10mA
IO=-10mA, II=-0.5mA
VO=-0.2V, IO=-5mA
VO=-5V, IO=-0.1mA
VO=-10V, IO=-5mA, f=1MHz
VI=-5V, IO=0
-
-
Min.
-
80
-
-
-1.0
-
-
33
33
Typ.
-
200
-0.1
-2.8
-1.2
200
-
47
47
(Ta=25°C)
Max. Unit
-500 nA
-
-
-0.3
V
-5.0
V
-
V
-
MHz
-0.18 mA
61
KΩ
61
KΩ
KSD-R5S019-000
2
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