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| SUR550J Datasheet, PDF (2/3 Pages) AUK corp – Epitaxial planar PNP silicon transistor | |||
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SUR550J
Absolute Maximum Ratings [ Tr1,Tr2 ]
Characteristic
Symbol
Output voltage
VO
Input voltage
VI
Output current
IO
Power dissipation
PDâ»
Junction temperature
TJ
Storage temperature range
Tstg
â»: Total rating
Rating
-50
-30, 6
-100
200
150
-55 ~ 150
(Ta=25°C)
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics [ Tr1,Tr2]
Characteristic
Symbol
Output cut-off current
IO(OFF)
DC current gain
GI
Output voltage
VO(ON)
Input voltage (ON)
VI(ON)
Input voltage (OFF)
Transition frequency
VI(OFF)
fT*
Input current
II
Input resistor (Input to base)
R1
Input resistor (Base to common)
R2
* : Characteristic of transistor only
Test Condition
VO=-50V, VI=0
VO=-5V, IO=-10mA
IO=-10mA, II=-0.5mA
VO=-0.2V, IO=-5mA
VO=-5V, IO=-0.1mA
VO=-10V, IO=-5mA, f=1MHz
VI=-5V, IO=0
-
-
Min.
-
80
-
-
-0.5
-
-
7
33
Typ.
-
150
-0.1
-
-
200
-
10
47
(Ta=25°C)
Max. Unit
-500 nA
-
-
-0.3
V
-1.8
V
-
V
-
MHz
-0.88 mA
13
KΩ
61
KΩ
KSD-R5S017-000
2
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