SUR541EF Datasheet, PDF (2/4 Pages) AUK corp – NPN Epitaxial Planar Silicon Transistor

Absolute maximum ratings (Tr1, Tr2)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
T_J
T_STG
SUR541EF
Ratings
50
50
5
100
100
150
-55 ~ 150
Ta=25°C
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics(Tr1, Tr2 : NPN)
Characteristic
Symbol
Test Condition
Collector Cut-off Current
I_CBO
V_CB=50V, I_E=0
Emitter Cut-off Current
I_EBO
V_EB=5V, I_C=0
DC Current Gain
h_FE
V_CE=5V, I_C=1mA
Collector-Emitter Saturation Voltage
Transition Frequency
Input Resistance
V_CE(SAT)
f_T^*
R₁
I_C=10mA, I_B=0.5mA
V_CE=10V, I_C=5mA
-
Collector Cut-off Current
I_CBO
V_CB=50V, I_E=0
* : Characteristic of Transistor Only
Ta=25°C
Min. Typ. Max. Unit
-
-
500 nA
-
-
500 nA
120
-
-
-
-
0.1 0.3
V
-
250
-
MHz
-
10
-
KΩ
-
-
500 nA
KST-J023-000
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