SUR540EF Datasheet, PDF (2/4 Pages) AUK corp – NPN/PNP Epitaxial Planar Silicon Transistor

Absolute maximum ratings (Tr1, Tr2)
Characteristic
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_D
T_J
T_STG
SUR540EF
Ratings
Tr1
Tr2
50
-50
50
-50
5
-5
100
-100
100
150
-55 ~ 150
Ta=25°C
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics(Tr1 : NPN)
Characteristic
Symbol
Test Condition
Collector Cut-off Current
I_CBO
V_CB=50V, I_E=0
Emitter Cut-off Current
I_EBO
V_EB=5V, I_C=0
DC Current Gain
h_FE
V_CE=5V, I_C=1mA
Collector-Emitter Saturation Voltage
Transition Frequency
V_CE(SAT)
f_T^*
I_C=10mA, I_B=0.5mA
V_CE=10V, I_C=5mA
Input Resistance
R₁
-
Collector Cut-off Current
I_CBO
V_CB=50V, I_E=0
* : Characteristic of Transistor Only
Ta=25°C
Min. Typ. Max. Unit
-
-
500 nA
-
-
500 nA
120
-
-
-
-
0.1 0.3
V
-
250
-
MHz
-
4.7
-
KΩ
-
-
500 nA
Electrical Characteristics(Tr2 : PNP)
Characteristic
Symbol
Test Condition
Collector Cut-off Current
I_CBO
V_CB=-50V, I_E=0
Emitter Cut-off Current
I_EBO
V_EB=-5V, I_C=0
DC Current Gain
h_FE
V_CE=-5V, I_C=-1mA
Collector-Emitter Saturation Voltage
Transition Frequency
Input Resistance
V_CE(SAT)
f_T^*
R₁
I_C=-10mA, I_B=-0.5mA
V_CE=-10V, I_C=-5mA
-
Collector Cut-off Current
I_CBO
V_CB=-50V, I_E=0
* : Characteristic of Transistor Only
Ta=25°C
Min. Typ. Max. Unit
-
-
-500 nA
-
-
-500 nA
120
-
-
-
-
-0.1 -0.3
V
-
250
-
MHz
-
4.7
-
KΩ
-
-
-500 nA
KST-J022-000
2