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| SUR539J Datasheet, PDF (2/3 Pages) AUK corp – Epitaxial planar NPN silicon transistor | |||
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SUR539J
Absolute Maximum Ratings [ Tr1,Tr2 ]
Characteristic
Symbol
Output voltage
VO
Input voltage
VI
Output current
IO
Power dissipation
PDâ»
Junction temperature
TJ
Storage temperature range
Tstg
â»: Total rating
Rating
50
40,-10
100
200
150
-55 ~ 150
(Ta=25°C)
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics [ Tr1,Tr2 ]
Characteristic
Symbol
Test Condition
Output cut-off current
IO(OFF) VO=50V, VI=0
DC current gain
GI
VO=5V, IO=10mA
Output voltage
VO(ON) IO=10mA, II=0.5mA
Input voltage (ON)
VI(ON) VO=0.2V, IO=5mA
Input voltage (OFF)
Transition frequency
VI(OFF)
fT*
VO=5V, IO=0.1mA
VO=10V, IO=5mA, f=1MHz
Input current
II
VI=5V, IO=0
Input resistor (Input to base)
R1
-
Input resistor (Base to common)
R2
-
* : Characteristic of transistor only
(Ta=25°C)
Min. Typ. Max. Unit
-
-
500 nA
70 120
-
-
-
0.1 0.3
V
-
2.1 3.0
V
1.0 1.2
-
V
-
200
-
MHz
-
-
0.36 mA
15.4 22 28.6 KΩ
15.4 22 28.6 KΩ
KSD-R5S007-000
2
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