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SUR537H Datasheet, PDF (2/3 Pages) AUK corp – Epitaxial planar PNP silicon transistor
SUR537H
Absolute Maximum Ratings [Tr1,Tr2]
Characteristic
Output voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature range
※: Total rating
Symbol
VO
VI
IO
PD※
TJ
Tstg
Rating
-50
-30, 5
-100
200
150
-55 ~ 150
(Ta=25°C)
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics [Tr1,Tr2]
(Ta=25°C)
Characteristic
Symbol
Test Condition
Min. Typ. Max. Unit
Output cut-off current
IO(OFF) VO=-50V, VI=0
-
-
-500 nA
DC current gain
GI
VO=-5V, IO=-10mA
120
-
-
-
Output voltage
VO(ON) IO=-10mA, II=-0.5mA
-
-0.1 -0.3
V
Input voltage (ON)
VI(ON) VO=-0.2V, IO=-5mA
-
-0.9 -1.4
V
Input voltage (OFF)
Transition frequency
VI(OFF) VO=-5V, IO=-0.1mA
-0.3 -0.55 -
fT*
VO=-10V, IO=-5mA, f=1MHz -
200
-
V
MHz
Input current
II
VI=-5V, IO=0
-
- -0.88 mA
Input resistor (Input to base)
R1
* : Characteristic of transistor only
-
7
10
13
KΩ
KSD-R5R020-000
2