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SUR531H Datasheet, PDF (2/3 Pages) AUK corp – Epitaxial planar PNP silicon transistor
SUR531H
Absolute Maximum Ratings [Tr1,Tr2]
Characteristic
Output voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature range
※: Total rating
Symbol
VO
VI
IO
PD※
TJ
Tstg
Rating
-50
-40, 10
-100
200
150
-55 ~ 150
(Ta=25°C)
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics [Tr1,Tr2]
Characteristic
Symbol
Output cut-off current
IO(OFF)
DC current gain
GI
Output voltage
VO(ON)
Input voltage (ON)
VI(ON)
Input voltage (OFF)
Transition frequency
VI(OFF)
fT*
Input current
II
Input resistor (Input to base)
R1
Input resistor (Base to common)
R2
* : Characteristic of transistor only
Test Condition
VO=-50V, VI=0
VO=-5V, IO=-10mA
IO=-10mA, II=-0.5mA
VO=-0.2V, IO=-5mA
VO=-5V, IO=-0.1mA
VO=-10V, IO=-5mA, f=1MHz
VI=-5V, IO=0
-
-
Min.
-
80
-
-
-1.0
-
-
33
33
Typ.
-
200
-0.1
-2.8
-1.2
200
-
47
47
(Ta=25°C)
Max. Unit
-500 nA
-
-
-0.3
V
-5.0
V
-
V
-
MHz
-0.18 mA
61
KΩ
61
KΩ
KSD-R5R015-000
2