SUR524H Datasheet, PDF (2/3 Pages) AUK corp – Epitaxial planar NPN silicon transistor

SUR524H
Absolute Maximum Ratings [Tr1,Tr2]
Characteristic
Output voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature range
※: Total rating
Symbol
V_O
V_I
I_O
P_D^※
T_J
T_stg
Rating
50
40,-10
100
200
150
-55 ~ 150
(Ta=25°C)
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics [Tr1,Tr2]
Characteristic
Symbol
Test Condition
Output cut-off current
I_O(OFF) V_O=50V, V_I=0
DC current gain
G_I
V_O=5V, I_O=10mA
Output voltage
V_O(ON) I_O=10mA, I_I=0.5mA
Input voltage (ON)
V_I(ON) V_O=0.2V, I_O=5mA
Input voltage (OFF)
Transition frequency
V_I(OFF)
f_T^*
V_O=5V, I_O=0.1mA
V_O=10V, I_O=5mA, f=1MHz
Input current
I_I
V_I=5V, I_O=0
Input resistor (Input to base)
R₁
-
Input resistor (Base to common)
R₂
-
* : Characteristic of transistor only
(Ta=25°C)
Min. Typ. Max. Unit
-
-
500 nA
80 200
-
-
-
0.1 0.3
V
-
2.8 5.0
V
1.0 1.2
-
V
-
200
-
MHz
-
- 0.18
mA
33
47
61
KΩ
33
47
61
KΩ
KSD-R5R009-000
2