 English |
|
|
|
|
|
|
|
| SUF622EF Datasheet, PDF (2/5 Pages) AUK corp – N-Ch/P-Ch Enhancement-Mode MOSFET | |||
| |||
| ◁ |
SUF622EF
Absolute maximum ratings
Characteristic
Drain-Source voltage
Gate-Source voltage
DC Drain current
Drain Power dissipation
Channel temperature
Storage temperature range
Symbol
VDS
VGSS
ID
PD
Tch
Tstg
Ratings
20
-20
10
-7
50
-50
100
150
-55~150
(Ta=25°C)
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics (Q1:N-CH)
Characteristic
Symbol
Test Condition
Drian-Source breakdown voltage
BVDSS ID=100µA, VGS=0
Gate-Threshold voltage
Vth
ID=0.1mA, VDS=3V
Drain cut-off current
IDSS
VDS=20V, VGS=0
Gate leakage current
IGSS
VGS=10V, VDS=0
Drain-Source on-resistance
Forward transfer admittance
RDS(ON)
ï½Yfsï½
VGS=2.5V, ID=10mA
VDS=3V, ID=10mA
Input capacitance
Ciss
VDS=3V, VGS=0, f=1MHz
Output capacitance
Coss
VDS=3V, VGS=0, f=1MHz
Reverse Transfer capacitance
Turn-on time
Turn-off time
Crss
VDS=3V, VGS=0, f=1MHz
ton
VDD=3V, ID=10mA
VGEN=0~2.5V
toff
VDD=3V, ID=10mA
VGEN=0~2.5V
Electrical Characteristics (Q2:P-CH)
Characteristic
Symbol
Test Condition
Drian-Source breakdown voltage
BVDSS ID=-100µA, VGS=0
Gate-Threshold voltage
Vth
ID=-0.1mA, VDS=-3V
Drain cut-off current
IDSS
VDS=-20V, VGS=0
Gate leakage current
IGSS
VGS=-7V, VDS=0
Drain-Source on-resistance
Forward transfer admittance
RDS(ON)
ï½Yfsï½
VGS=-2.5V, ID=-10mA
VDS=-3V, ID=-10mA
Input capacitance
Ciss
VDS=-3V, VGS=0, f=1MHz
Output capacitance
Coss
VDS=-3V, VGS=0, f=1MHz
Reverse Transfer capacitance
Turn-on time
Turn-off time
Crss
VDS=-3V, VGS=0, f=1MHz
ton
VDD=-3V, ID=-10mA
VGEN=0~-2.5V
toff
VDD=-3V, ID=-10mA
VGEN=0~-2.5V
(Ta=25°C)
Min. Typ. Max. Unit
20
V
0.5
1.5
V
1
µA
1
µA
20
40
â¦
20
mS
5.5
pF
6.5
pF
1.6
pF
0.14
ã²
0.14
ã²
(Ta=25°C)
Min. Typ. Max. Unit
-20
V
-0.5
-1.5
V
-1
µA
-1
µA
20
40
â¦
15
mS
10.4
pF
8.4
pF
2.8
pF
0.15
ã²
0.13
ã²
KST-J018-000
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese