STK830F Datasheet, PDF (2/8 Pages) AUK corp – Advanced Power MOSFET

Absolute maximum ratings
Characteristic
Drain-Source voltage
Gate-Source voltage
Continuous Drain current (Tc=25℃)
Continuous Drain current (Tc=100℃)
Drain Current-Pulsed
①
Power Dissipation (Tc=25℃)
Linear Derating Factor
Single Pulsed Avalanche Energy ②
Avalanche current
①
Repetitive Avalanche Energy
①
Peak Diode Recovery dv/dt
Operating Junction and
Storage temperature range
Maximum lead temp. for soldering
Purpose, 1/8” from case for 5-seconds
* Limited by Maximum junction Temperature
Thermal Resistance
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Symbol
V_DSS
V_GS
I_D
I_D
I_DM
P_D
E_AS
I_AR
E_AR
dv/dt
T_J , T_stg
T_L
Symbol
R_{θ JC}
R_{θ CS}
R_{θ JA}
STK830F
Rating
500
±30
4.5^*
2.9^*
18
38
0.3
270
4.5
7.3
5.5
-55~150
300
Unit
V
V
A
A
A
W
W/℃
mJ
A
mJ
V/ns
°C
°C
Typ.
0.5
Max
3.31
62.5
Units
℃/W
KST-H034-000
2