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STK0602UF Datasheet, PDF (2/4 Pages) AUK corp – N-Channel Enhancement-Mode MOSFET
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STK0602UF
Absolute maximum ratings
Characteristic
Drain-Source voltage
Gate-Source voltage
Maximum Drain current
Pulsed Drain Current
Drain Power dissipation
Operating Junction and
Storage temperature range
Symbol
VDSS
VGS
ID
IDP
PD
TJ , Tstg
Rating
60
±8
200
800
200
-55~150
(Ta=25°C)
Unit
V
V
mA
mA
mW
°C
Electrical Characteristics
Characteristic
Drian-Source breakdown voltage
Gate-Threshold voltage
Zero Gate voltage drain current
Gate-body leakage
Drain-Source on-resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Test Condition
BVDSS
VGS(th)
IDSS
IGSS
ID=10µA, VGS=0
ID=1µA, VDS=5V
VDS=60V, VGS=0
VDS=0V, VGS=±6V
RDS(ON)
VGS=5V, ID=10mA
VGS=10V, ID=10mA
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=5V, ID=20mA
VDS=5V, VGS=0, f=1MHz
VDD=5V, ID=10mA
VGS=5V
RL=500Ω
(Ta=25°C)
Min. Typ. Max. Unit
60
-
-
V
0.8
-
1.8
V
-
-
1.0
µA
-
-
±1.0 µA
-
2.5 6.0
Ω
-
2.0 4.0
20
65
-
mS
-
26
-
-
20
-
pF
-
10
-
150
240
ns
-
200
-
-
300
-
KST-3067-000
2
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