STD882 Datasheet, PDF (2/3 Pages) AUK corp – NPN Silicon Transistor

STD882
Absolute maximum ratings
Characteristic
Symbol
Collector-Base voltage
Collector-Emitter voltage
V_CBO
V_CEO
Emitter-Base voltage
V_EBO
Collector current(DC)
Collector current(Pulse) *
I_C(DC)
I_C(Pulse) *
Collector dissipation
P_C
Junction temperature
T_j
Storage temperature
T_stg
* Pulse Test : Pulse Width=10ms (Max.), Duty Cycle=30%(Max.)
Ratings
40
15
7
5
8
1.2
150
-55~150
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE¹
h_FE²
V_CE(sat)
f_T
C_ob
Test Condition
I_C=50µA, I_E=0
I_C=1mA, I_B=0
I_E=50µA, I_C=0
V_CB=30V, I_E=0
V_EB=5V, I_C=0
V_CE=2V, I_C=0.5A
V_CE=2V, I_C=2A
I_C=3A, I_B=100mA
V_CE=6V, I_E=-50mA
V_CB=20V, I_E=0, f=1MHz
(Ta=25°C)
Min. Typ. Max. Unit
40
-
-
V
15
-
-
V
7
-
-
V
-
-
0.1
µA
-
-
0.1
µA
160
-
320
-
100
-
-
-
-
-
0.4
V
-
150
-
MHz
-
-
50
pF
KST-B010-001
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