STD5915 Datasheet, PDF (2/4 Pages) AUK corp – NPN Silicon Power Transistor

Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
Ratings
900
530
9
1.5
3
0.75
1.1
150
-55~150
STD5915
(Ta=25℃)
Unit
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-emitter sustaining voltage V_CE(sus)* I_C=10mA, I_B=0
Collector cut-off current
I_CBO
V_CB=900V, I_E=0
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
I_EBO
h_FE*
V_CE(sat)*
V_EB=9V, I_C=0
I_C=0.4A, V_CE=10V
I_C=1A, V_CE=10V
I_C=0.5A, I_B=0.1A
I_C=1A, I_B=0.25A
I_C=1.5A, I_B=0.5A
Base-emitter saturation voltage
V_BE(sat)*
I_C=0.5A, I_B=0.1A
I_C=1A, I_B=0.25A
Transition frequency
Output capacitance
f_T
V_CB=10V, I_C=0.1A, f=1MHz
C_ob
V_CB=10V, I_E=0, f=0.1MHz
Turn on Time
t_on
Storage Time
t_stg
Fall Time
t_f
<
* Pulse test: PW≤300 ㎲, Duty cycle≤2% Pulse
(Ta=25℃)
Min. Typ. Max. Unit
530
-
-
V
-
-
10
uA
-
-
10
uA
20
-
40
6
-
40
-
-
0.8
-
-
1
V
-
-
2.5
-
-
1
V
-
-
1.2
4
-
-
MHz
-
11
-
pF
-
-
1.1
-
-
4
㎲
-
-
0.7
KSD-T0A011-002
2