STD361 Datasheet, PDF (2/4 Pages) AUK corp – NPN Silicon Transistor

STD361
Absolute maximum ratings
Characteristic
Symbol
Collector-Base voltage
V_CBO
Collector-Emitter voltage
V_CEO
Emitter-Base voltage
V_EBO
Collector current
I_C
Collector power dissipation
P_C
P_C*
Junction temperature
T_J
Storage temperature
T_stg
* : When mounted on 40×40×0.8 ㎜ ceramic substate
Ratings
40
15
7
5
0.5
2
150
-55~150
(Ta=25°C)
Unit
V
V
V
A
W
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE1
h_FE2
V_CE(sat)
f_T
C_ob
Test Condition
I_C=50 ㎂, I_E=0
I_C=1 ㎃, I_B=0
I_E=50 ㎂, I_C=0
V_CB=30V, I_E=0
V_EB=5V, I_C=0
V_CE=2V, I_C=500 ㎃
V_CE=2V, I_C=3A
I_C=3A, I_B=150 ㎃
V_CE=6V, I_E=-50 ㎃
V_CB=20V, I_E=0, f=1 ㎒
(Ta=25°C)
Min. Typ. Max. Unit
40
-
-
V
15
-
-
V
7
-
-
V
-
-
0.1
㎂
-
-
0.1
㎂
160
-
320
-
40
-
-
-
-
-
0.3
V
-
150
-
㎒
-
-
50
㎊
KST-8007-002
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