STD1862L Datasheet, PDF (2/3 Pages) AUK corp – NPN Silicon Transistor

STD1862L
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Ratings
30
30
5
2
1
150
-55~150
(Ta=25°C)
Unit
V
V
V
A
W
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Base-Emitter on voltage
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
* : h_FE rank / O : 100~200, Y : 160~320
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE*
V_BE(on)
V_CE(sat)
f_T
C_ob
I_C=100µA, I_E=0
I_C=10mA, I_B=0
I_E=1Ma, I_C=0
V_CB=30V, I_E=0
V_EB=5V, I_C=0
V_CE=2V, I_C=500mA
V_CE=2V, I_C=500mA
I_C=2A, I_B=0.2A
V_CB=5V, I_C=50mA
V_CB=10V, I_E=0, f=1MHz
(Ta=25°C)
Min. Typ. Max. Unit
30
-
-
V
30
-
-
V
5
-
-
V
-
-
100 nA
-
-
100 nA
100
-
320
-
-
-
1
V
-
-
0.8
V
-
170
-
MHz
-
48
-
pF
KST-I007-000
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