STD1766 Datasheet, PDF (2/3 Pages) AUK corp – NPN Silicon Transistor

STD1766
Absolute maximum ratings
Characteristic
Symbol
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
P_C^*
T_j
T_stg
* : When mounted on 40×40×0.8mm ceramic substate
Ratings
40
32
5
2
0.5
2
150
-55~150
(Ta=25°C)
Unit
V
V
V
A
W
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BV_CBO I_C=50µA, I_E=0
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE*
I_C=1mA, I_B=0
I_E=50µA, I_C=0
V_CB=20V, I_E=0
V_EB=4V, I_C=0
V_CE=3V, I_C=0.5A
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
V_CE(sat)
f_T
C_ob
I_C=2A, I_B=200mA
V_CB=5V, I_C=500mA
V_CB=10V, I_E=0, f=1MHz
* : h_FE rank / O : 100~200, Y : 160~320
Min.
40
32
5
-
-
100
-
-
-
Typ.
-
-
-
-
-
-
0.5
100
30
(Ta=25°C)
Max. Unit
-
V
-
V
-
V
1
µA
1
µA
320
-
0.8
V
-
MHz
-
pF
KST-8006-001
2