STD1664 Datasheet, PDF (2/3 Pages) AUK corp – NPN Silicon Transistor

STD1664
Absolute maximum ratings
Characteristic
Symbol
Ratings
Collector-Base voltage
V_CBO
Collector-Emitter voltage
V_CEO
Emitter-Base voltage
V_EBO
Collector current
I_C
Collector dissipation
P_C
P_C^*
Junction temperature
T_j
Storage temperature
T_stg
* : When mounted on 40×40×0.8mm ceramic substate
40
32
5
1
0.5
2
150
-55~150
Electrical Characteristics
Characteristic
Symbol
Test Condition
Min.
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE^*
V_CE(sat)
f_T
C_ob
I_C=50µA, I_E=0
I_C=1mA, I_B=0
I_E=50µA, I_C=0
V_CB=20V, I_E=0
V_EB=4V, I_C=0
V_CE=3V, I_C=0.1A
I_C=500mA, I_B=50mA
V_CE=5V, I_C=50mA
V_CB=10V, I_E=0, f=1MHz
40
32
5
-
-
100
-
-
-
* : h_FE rank / O : 100 ~ 200, Y : 160 ~ 320
Typ.
-
-
-
-
-
-
0.15
150
15
(Ta=25°C)
Unit
V
V
V
A
W
°C
°C
(Ta=25°C)
Max. Unit
-
V
-
V
-
V
0.5
µA
0.5
µA
320
-
0.4
V
-
MHz
-
pF
KST-8004-001
2