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STD13007FC Datasheet, PDF (2/5 Pages) AUK corp – NPN Silicon Power Transistor
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Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Collector Power dissipation (Tc=25℃)
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
PC
Tj
Tstg
STD13007FC
Rating
700
400
9
8
16
4
40
150
-55~150
(Tc=25℃)
Unit
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics
Characteristic
Collector-Emitter sustaining voltage
Emitter cut-off current
DC Current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
Output capacitance
Turn on Time
Storage Time
Fall Time
* Pulse test: PW≤300 ㎲, Duty cycle≤2%.
Symbol
BVCEO(sus)
IEBO
hFE*
VCE(sat)*
VBE(sat)*
fT
Cob
ton
tstg
tf
Test Condition
IC=10mA, IB=0
VEB=9V, IC=0
IC=2A, VCE=5V
IC=5A, VCE=5V
IC=2A, IB=0.4A
IC=5A, IB=1A
IC=8A, IB=2A
IC=2A, IB=0.4A
IC=5A, IB=1A
VCE=10V, IC=0.5A, f=1MHz
VCB=10V, IE=0, f=0.1MHz
VCC=125V, IC=5A
IB1=-IB2=1A
Min.
400
-
8
5
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
14
80
-
-
-
(Tc=25℃)
Max. Unit
-
V
1
mA
60
30
1
2
V
3
1.2
V
1.6
-
MHz
-
pF
1.6
3
㎲
0.7
KST-H028-000
2
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