STD13005F Datasheet, PDF (2/4 Pages) AUK corp – NPN Silicon Power Transistor

Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Base current (Pulse)
Total Power dissipation (Tc=25℃)
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
I_BM
P_D
T_j
T_stg
STD13005F
Ratings
700
400
9
4
8
2
4
30
150
-55~150
(Tc=25℃)
Unit
V
V
V
A
A
A
A
W
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Emitter sustaining voltage
Collector cut-off current
Emitter cut-off current
V_CE(sus)
I_CEV
I_EBO
I_C=10mA, I_B=0
V_CEV=Rated Value
V_BE(off)=1.5V
V_EB=9V, I_C=0
DC Current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
h_FE*
V_CE(sat)*
V_BE(sat)*
I_C=1A, V_CE=5V
I_C=2A, V_CE=5V
I_C=1A, I_B=0.2A
I_C=2A, I_B=0.5A
I_C=4A, I_B=1A
I_C=1A, I_B=0.2A
I_C=2A, I_B=0.5A
Transition frequency
f_T
V_CB=10V, I_C=0.5A, f=1MHz
Output capacitance
C_ob
V_CB=10V, I_E=0, f=0.1MHz
Turn on Time
t_ON
Storage Time
t_STG
Fall Time
t_F
* Pulse test: PW≤300 ㎲, Duty cycle≤2% Pulse
V_CC=125V,I_C=2A, R_L=62.5Ω
I_B1=-I_B2=0.4A
Min.
400
-
-
10
8
-
-
-
-
-
4
-
-
-
-
(Tc=25℃)
Typ. Max. Unit
-
-
V
-
1
mA
-
1
mA
-
60
-
40
-
0.5
-
0.6
V
-
1
-
1.2
V
-
1.6
-
-
MHz
65
-
pF
-
0.8
-
4
㎲
-
0.9
KST-H019-000
2