STD13003 Datasheet, PDF (2/3 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Total Power dissipation (Ta=25℃)
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
P_C
T_j
T_stg
Ratings
700
400
9
1.5
3
0.75
1.2
150
-55~150
STD13003
(Tc=25℃)
Unit
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Emitter sustaining voltage V_CE(sus) I_C=5mA, I_B=0
Emitter cut-off current
I_EBO
V_EB=9V, I_C=0
DC Current gain
Collector-Emitter saturation voltage
h_FE*
V_CE(sat)*
I_C=0.5A, V_CE=2V
I_C=1A, V_CE=2V
I_C=0.5A, I_B=0.1A
I_C=1A, I_B=0.25A
I_C=1.5A, I_B=0.5A
Base-Emitter saturation voltage
V_BE(sat)*
I_C=0.5A, I_B=0.1A
I_C=1A, I_B=0.25A
Transition frequency
f_T
V_CB=10V, I_C=0.1A, f=1MHz
Output capacitance
C_ob
V_CB=10V, I_E=0, f=0.1MHz
Turn on Time
t_on
Storage Time
t_stg
Fall Time
t_f
* Pulse test: PW≤300 ㎲, Duty cycle≤2% Pulse
V_CC=125V,I_C=1A
I_B1=-I_B2=0.2A
(Tc=25℃)
Min. Typ. Max. Unit
400
-
-
V
-
-
10
uA
8
-
40
5
-
-
-
-
0.5
-
-
1
V
-
-
3
-
-
1
V
-
-
1.2
4
-
-
MHz
-
21
-
pF
-
-
1.1
-
-
4
㎲
-
-
0.7
KST-B019-000
2