STD129 Datasheet, PDF (2/3 Pages) AUK corp – NPN Silicon Transistor

STD129
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V_{C B O}
V_{C E O}
V_{E B O}
I_C
P_C
T_j
T_stg
Ratings
40
15
7
5
625
150
- 55~150
(Ta=25° C)
Unit
V
V
V
A
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE1
h_FE2
V_CE(sat)
f_T
C_ob
Test Condition
I_C=50µA, I_E=0
I_C=1mA, I_B=0
I_E=50µA, I_C=0
V_CB=30V, I_E=0
V_EB=5V, I_C=0
V_CE=2V, I_C=0.5A
V_CE=2V, I_C=3A
I_C=3A, I_B=150mA
V_CE=6V, I_E=-50mA
V_CB=20V, I_E=0, f=1MHz
Min.
40
15
7
-
-
160
40
-
-
-
Typ.
-
-
-
-
-
-
-
-
150
-
(Ta=25° C)
Max. Unit
-
V
-
V
-
V
0.1
µA
0.1
µA
320
-
-
-
0.3
V
-
MHz
50
pF
KST-9060-001
2