STD123ASF Datasheet, PDF (2/3 Pages) AUK corp – NPN Silicon Transistor

STD123ASF
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
* : Package mounted on 99.5% alumina 10×8×0.1mm
Electrical Characteristics
Characteristic
Symbol
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Transistor frequency
Collector output capacitance
On resistance
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
C_ob
R_ON
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C*
T_j
T_stg
Ratings
10
6
3
1
350
150
-55~150
Test Condition
I_C=50µA, I_E=0
I_C=1mA, I_B=0
I_E=50µA, I_C=0
V_CB=10V, I_E=0
V_EB=3V, I_C=0
V_CE=1V, I_C=100mA
I_C=500mA, I_B=50mA
V_CE=5V, I_C=50mA
V_CB=10V, I_E=0, f=1MHz
f=1KHz, I_B=1mA, V_IN=0.3V
Min.
10
6
3
-
-
400
-
-
-
-
Typ.
-
-
-
-
-
-
0.1
260
5
0.6
(Ta=25°C)
Unit
V
V
V
A
mW
°C
°C
(Ta=25°C)
Max. Unit
-
V
-
V
-
V
0.1
µA
0.1
µA
-
-
0.3
V
-
MHz
-
pF
-
Ω
KST-2029-001
2