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STC918SF Datasheet, PDF (2/11 Pages) AUK corp – NPN Silicon Transistor
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Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
20
10
1.5
50
200
150
-55~150
STC918SF
Ta=25°C
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Collector output capacitance

Symbol
BVCBO*1
BVCEO*1
ICBO*1
IEBO*1
hFE*1
fT
Cob
Test Condition
IC=100µA, IE=0
IC=100uA, IB=0
VCB=10V, IE=0
VEB=1V, IC=0
VCE=6V, IC=5mA
VCE=6V, IE=15mA
VCB=1V, IE=0, f=1MHz
VCB=5V, IE=0, f=1MHz
Performance Characteristics
Characteristic
Symbol
Test Condition
Insertion Gain
Maximum Unilateral Gain
Maximum Available Gain
Maximum Stable Gain
Noise Figure(Minimum)
Noise Resistance
Associated Gain at Minimum NF
Output Power at 1.0dB Gain
Compression
Output 3’rd Intercept
ȈS21Ȉ2
GuMAX*2
MAG*3
MSG*4
NFMIN
RN
GNF
P1dB
OIP3*5
VCE=1V, IC=1mA, f=1GHz
VCE=6V, IC=15mA, f=1GHz
VCE=1V, IC=1mA, f=1GHz
VCE=6V, IC=15mA, f=1GHz
VCE=6V, IC=15mA, f=1GHz
VCE=1V, IC=1mA, f=1GHz
VCE=1V, IC=1mA, f=1GHz
VCE=6V, IC=5mA, f=1GHz
VCE=1V, IC=1mA, f=1GHz
VCE=6V, IC=5mA, f=1GHz
VCE=1V, IC=1mA, f=1GHz
VCE=6V, IC=5mA, f=1GHz
VCE=6V, IC=15mA, f=1GHz
VCE=6V, IC=15mA, f=1GHz
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ȈS12Ȉ
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, if K<1
, if K>1
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KST-2107-000
Min.
20
10
-
-
50
-
-
-
Typ.
-
-
-
-
-
9
0.4
0.3
TC=25°C
Max. Unit
-
V
-
V
0.1
µA
0.1
µA
-
-
-
GHz
-
pF
-
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
7
15
13
17
18
12
1.6
1.4
24
19
10
15
TC=25°C
Max. Unit
-
dB
-
-
dB
-
-
dB
-
-
dB
-
-
Ω
dB
-
13
-
dBm
-
28
-
dBm
2
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