STC9014N Datasheet, PDF (2/4 Pages) AUK corp – NPN Silicon Transistor

STC9014N
Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Rating
60
50
5
150
500
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-emitter breakdown voltage BV_CEO I_C=1mA, I_B=0
Collector cut-off current
I_CBO
V_CB=60V, I_E=0
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
I_EBO
h_FE^*
V_CE(sat)
V_EB=5V, I_C=0
V_CE=5V, I_C=1mA
I_C=100mA, I_B=10mA
Base-emitter voltage
V_BE
V_CE=5V, I_C=1mA
Transition frequency
f_T
V_CE=10V, I_C=10mA
Collector output capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
* : h_FE rank / B : 100 ~ 300, C : 200 ~ 600, D : 400 ~ 1000.
(Ta=25°C)
Min. Typ. Max. Unit
50
-
-
V
-
-
50
nA
-
-
100 nA
100
-
1000
-
-
0.1 0.25
V
-
0.65 0.85
V
-
200
-
MHz
-
2
-
pF
KSD-T0C013-001
2