STC9013N Datasheet, PDF (2/4 Pages) AUK corp – Epitaxial planar NPN silicon transistor

STC9013N
Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Rating
40
30
5
500
500
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-emitter breakdown voltage BV_CEO I_C=1mA, I_B=0
Collector cut-off current
I_CBO
V_CB=40, I_E=0
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
I_EBO
h_FE^*
V_CE(sat)
V_EB=5V, I_C=0
V_CE=1V, I_C=50mA
I_C=100mA, I_B=10mA
Base-emitter voltage
V_BE
V_CE=1V, I_C=100mA
Transition frequency
f_T
V_CE=6V, I_C=20mA
Collector output capacitance
C_ob
V_CB=6V, I_E=0, f=1MHz
* : h_FE Rank / F : 96~135, G : 118~166, H : 144~202, I : 176~246.
(Ta=25°C)
Min. Typ. Max. Unit
30
-
-
V
-
-
0.1
µA
-
-
0.1
µA
96
-
246
-
-
0.1 0.25
V
- 0.75 1.0
V
-
200
-
MHz
-
7.0
-
pF
KSD-T0C010-001
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