STC8050N Datasheet, PDF (2/4 Pages) AUK corp – NPN Silicon Transistor

STC8050N
Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
T_J
T_stg
Rating
30
25
6
800
-800
500
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-emitter breakdown voltage BV_CEO I_C=1mA, I_B=0
Collector cut-off current
I_CBO
V_CB=30V, I_E=0
Emitter cut-off current
DC current gain
I_EBO
h_FE*
V_EB=6V, I_C=0
V_CE=1V, I_C=50mA
Collector-emitter saturation voltage V_CE(sat) I_C=500mA, I_B=50mA
Base-emitter voltage
V_BE
V_CE=1V, I_C=500mA
Transition frequency
f_T
V_CE=5V, I_C=10mA
Collector output capacitance
C_ob
V_CB=10V, I_E=0
* : h_FE Rank / B : 85~160, C : 120~200, D : 160~300
(Ta=25°C)
Min. Typ. Max. Unit
25
-
-
V
-
-
50
nA
-
-
50
nA
85
-
300
-
-
-
0.5
V
- 0.85 1.2
V
-
180
-
MHz
-
19
-
pF
KSD-T0C007-001
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