STC722D Datasheet, PDF (2/3 Pages) AUK corp – NPN Silicon Transistor

STC722D
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Ratings
40
30
5
3
15
150
-55~150
(Ta=25°C)
Unit
V
V
V
A
W
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BV_CBO
I_C=50µA, I_E=0
Collector-Emitter breakdown voltage
BV_CEO
I_C=1mA, I_B=0
Emitter-Base breakdown voltage
BV_EBO
I_C=50µA, I_C=0
Collector cut-off current
I_CBO
V_CB=20V, I_E=0
Emitter cut-off current
I_EBO
V_EB=4V, I_C=0
DC current gain
V_CE=3V, I_C=500mA
h_FE
V_CE=3V, I_C=3A
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
V_CE(sat)
f_T
C_ob
V_CE=2A, I_C= 200mA
V_CE=5V, I_C=500mA,
f=1MHz
V_CB=10V, I_E=0, f=1MHz
* : h_FE rank / O : 80~218, Y : 120~270, G : 180~390
Min.
40
30
5
-
-
80
10
-
(Ta=25°C)
Typ. Max. Unit
-
-
V
-
-
V
-
-
V
-
1
µA
-
1
µA
-
390
-
-
-
0.5 0.8
V
-
120
-
MHz
-
13
-
pF
KST-D002-001
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