STC4350F Datasheet, PDF (2/4 Pages) AUK corp – NPN Silicon Transistor

Absolute Maximum Ratings
Characteristic
Symbol
Collector-base voltage
V_CBO
Collector-emitter voltage
V_CEO
Emitter-base voltage
V_EBO
Collector current
I_C
P_C
Collector Power dissipation
P_C^※
Junction temperature
T_J
Storage temperature range
T_stg
※ Device mounted on ceramic substrate (250mm²â…¹0.8t)
Rating
60
50
6
3
0.5
1
150
-55~150
STC4350F
[Ta=25℃]
Unit
V
V
V
A
W
W
°C
°C
Electrical Characteristics
Characteristic
Symbol
Collector-emitter breakdown voltage
BV_CEO
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
I_EBO
h_FE
h_FE
V_CE(sat)
V_BE(sat)
f_T
C_ob
Turn-on Time
t_on
Switching
Time
Storage Time
t_stg
Fall Time
t_f
*: Pulse test : t_P≤300µs, Duty cycle≤2%
Test Condition
I_C=10mA, I_B=0
V_CB=60V, I_E=0
V_EB=6V, I_C=0
V_CE=2V, I_C=0.1A*
V_CE=2V, I_C=2A*
I_C=2A, I_B=0.1A*
I_C=2A, I_B=0.1A*
V_CE=10V, I_C=0.05A
V_CB=10V, I_E=0, f=1MHz
<
[Ta=25℃]
Min. Typ. Max. Unit
50
-
-
V
-
-
0.1
μA
-
-
0.1
μA
120
-
240
40
-
-
-
-
0.35
V
-
-
1.2
V
-
210
-
MHz
-
18
-
pF
-
100
-
-
300
-
nS
-
50
-
※ Recommend PCB solder land [Unit: mm]
KSD-T5B008-001
2