STC42N Datasheet, PDF (2/4 Pages) AUK corp – Epitaxial planar NPN silicon transistor

STC42N
Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Rating
300
300
6
500
400
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-emitter breakdown voltage BV_CEO I_C=1mA, I_B=0
Collector cut-off current
I_CBO
V_CB=300V, I_E=0
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
I_EBO
h_FE^*
V_CE(sat)^*
V_BE(sat)^*
V_BE
V_EB=6V, I_C=0
V_CE=10V, I_C=30mA
I_C=20mA, I_B=2mA
I_C=20mA, I_B=2mA
V_CE=10V, I_C=30mA
Transition frequency
f_T
V_CE=20V, I_C=10mA
Collector output capacitance
C_ob
V_CB=20V, I_E=0, f=1MHz
* ： Pulse Tester： Pulse Width ≤ 300 ㎲, Duty Cycle≤ 2.0%
(Ta=25°C)
Min. Typ. Max. Unit
300
-
-
V
-
-
0.1
µA
-
-
0.1
µA
40
-
-
-
-
-
0.5
V
-
-
0.9
V
-
0.7 0.9
V
-
130
-
MHz
-
2
-
pF
KSD-T0C015-001
2