STC405D Datasheet, PDF (2/4 Pages) AUK corp – NPN Silicon Transistor

Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation (Tc=25℃)
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
STC405D
Rating
80
60
5
5
15
150
-55~150
Unit
V
V
V
A
W
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector cut-off current
I_CBO
V_CB=80V, I_E=0
Emitter cut-off current
I_EBO
V_EB=5V, I_C=0
Collector-Emitter breakdown voltage BV_CEO I_C=1mA, I_B=0
DC current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
h_FE
V_CE(sat)
V_BE(SAT)
V_CE=5V, I_C=1A
V_CE=5V, I_C=3A
I_C=3A, I_B=300mA
I_C=3A, I_B=300mA
Transition frequency
f_T
V_CB=5V, I_C=50mA
Collector output capacitance
* HFE rank : 200~400 Only
C_ob
V_CB=10V, I_E=0, f=1MHz
Min. Typ. Max. Unit
-
-
10
µA
-
-
10
µA
60
-
-
V
200
-
400
-
80
-
-
-
-
1
V
-
-
1.5
V
-
8
-
MHz
-
25
-
pF
KST-D005-000
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