STC403 Datasheet, PDF (2/3 Pages) AUK corp – NPN Silicon Transistor

Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector dissipation (Tc=25℃)
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Ratings
80
60
5
3
15
150
-55~150
STC403
Unit
V
V
V
A
W
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Emitter breakdown voltage BV_CEO I_C=50mA, I_B=0
Collector cut-off current
I_CBO
V_CB=60V, I_E=0
Emitter cut-off current
I_EBO
V_EB=5V, I_C=0
DC current gain
h_FE *
V_CE=5V, I_C=0.5A
Base-Emitter on voltage
V_BE(ON) V_CE=5V, I_C=0.5A
Collector-Emitter saturation voltage
V_CE(sat) I_C=2A, I_B=0.2A
Transition frequency
f_T
V_CB=5V, I_C=0.5A
Collector output capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
Turn-on Time
T_on
Switching
Time
Storage Time
T_stg
Fall Time
T_f
* hFE rank : 200~400 Only
Min. Typ. Max. Unit
60
-
-
V
-
-
50
µA
-
-
50
µA
200
-
400
-
-
0.7
1
V
-
0.4
1
V
-
30
-
MH
-
20
-
pF
-
0.65
-
-
1.3
-
㎲
-
0.65
-
KST-H001-001
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