STC352 Datasheet, PDF (2/3 Pages) AUK corp – NPN Silicon Transistor

STC352
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Emitter Current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
T_j
T_stg
Ratings
40
30
5
2
-2
1.2
150
-55~150
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BV_CBO I_C=100µA, I_E=0
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE*
I_C=10mA, I_B=0
I_E=1mA, I_C=0
V_CB=40V, I_E=0
V_EB=5V, I_C=0
V_CE=2V, I_C=500mA
Base-Emitter on voltage
Collector-Emitter saturation voltage
Transition frequency
V_BE(ON)
V_CE(sat)1
V_CE(sat)2
f_T
V_CE=2V, I_C=500mA
I_C=2A, I_B=0.2A
I_C=1.5A, I_B=0.03A
V_CE=5V, I_C=500mA
Collector output capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
* : h_FE rank / O : 100~200, Y : 160~320
Min.
40
30
5
-
-
100
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
120
13
(Ta=25°C)
Max. Unit
-
V
-
V
-
V
0.1
µA
0.1
µA
320
-
1
V
0.8
V
2
-
MHz
-
pF
KST-B001-000
2