STC344 Datasheet, PDF (2/3 Pages) AUK corp – NPN Silicon Transistor

STC344
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Emitter Current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
T_j
T_stg
Ratings
300
300
7
100
-100
1.2
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mA
W
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BV_CBO I_C=50µA, I_E=0
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
BV_CEO
BV_EBO
I_CBO
I_EBO
I_C=1mA, I_B=0
I_E=50µA, I_C=0
V_CB=300V, I_E=0
V_EB=5V, I_C=0
DC current gain
h_FE
V_CE=10V, I_C=10mA
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
V_CE(sat)
f_T
C_ob
I_C=10mA, I_B=1mA
V_CE=10V, I_C=20mA
V_CB=20V, I_E=0, f=1MHz
Min.
300
300
7
-
-
40
-
50
-
Typ.
-
-
-
-
-
-
-
95
3
(Ta=25°C)
Max. Unit
-
V
-
V
-
V
0.5
µA
0.5
µA
300
-
0.5
V
-
MHz
-
pF
KST-B003-001
2