STC2222N Datasheet, PDF (2/4 Pages) AUK corp – NPN Silicon Transistor

Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Rating
60
30
5
600
400
150
-55~150
STC2222N
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
BV_CEO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE
f_T
C_ob
Test Condition
I_C=1mA, I_B=0
V_CB=60V, I_E=0
V_EB=5V, I_C=0
V_CE=10V, I_C=10mA
I_C=150mA, I_B=15mA
V_CE=10V, I_C=10mA
V_CE=10V, I_C=10mA
V_CB=10V, I_E=0, f=1MHz
(Ta=25°C)
Min. Typ. Max. Unit
30
-
-
V
-
-
50
nA
-
-
50
nA
75
-
-
-
-
-
0.4
V
0.65 0.85
V
-
200
-
MHz
-
6.0
-
pF
KSD-T0C009-001
2