STB1188 Datasheet, PDF (2/3 Pages) AUK corp – PNP Silicon Transistor

STB1188
Absolute maximum ratings
Characteristic
Symbol
Ratings
(Ta=25°C)
Unit
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
V_CBO
-40
V
V_CEO
-32
V
V_EBO
-5
V
I_C
-2
A
P_C
P_C^*
0.5
2
W
T_j
150
°C
T_stg
-55~150
°C
* : When mounted on 40×40×0.8mm ceramic substate
Electrical Characteristics
Characteristic
Symbol
Test Condition
(Ta=25°C)
Min. Typ. Max. Unit
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter on voltage
Transition frequency
Collector output capacitance
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE*
V_CE(sat)
f_T
C_ob
I_C=-50µA, I_E=0
I_C=-1mA, I_B=0
I_E=-50µA, I_C=0
V_CB=-20V, I_E=0
V_EB=-4V, I_C=0
V_CE=-3V, I_C=-0.1A
I_C=-2A, I_B=-200mA
V_CB=-5V, I_C=-500mA,
f=30MHz
V_CB=-10V, I_E=0, f=1MHz
-40
-
-
V
-32
-
-
V
-5
-
-
V
-
-
-1
µA
-
-
-1
µA
100
-
320
-
-
-0.5 -0.8
V
-
150
-
MHz
-
50
-
pF
* : h_FE rank / O : 100~200, Y : 160~320
KST-8002-001
2