STB1132 Datasheet, PDF (2/3 Pages) AUK corp – PNP Silicon Transistor

STB1132
Absolute maximum ratings
Characteristic
Symbol
Ratings
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
P_C^*
T_j
T_stg
-40
-32
-5
-1
0.5
2
150
-55~150
* : When mounted on 40×40×0.8mm ceramic substate
Electrical Characteristics
Characteristic
Symbol
Test Condition
Min.
Collector-Base breakdown voltage
BV_CBO I_C=-50µA, I_E=0
-40
Collector-Emitter breakdown voltage BV_CEO I_C=-1mA, I_B=0
-32
Emitter-Base breakdown voltage
BV_EBO I_E=-50µA, I_C=0
-5
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
I_CBO
I_CES
I_EBO
h_FE^*
V_CB=-20V, I_E=0
V_CE=-30V, I_C=0
V_EB=-4V, I_C=0
V_CE=-3V, I_C=-0.1A
-
-
-
100
Collector-Emitter saturation voltage V_CE(sat) I_C=-500mA, I_B=-50mA
-
Transition frequency
f_T
V_CE=-5V, I_C=-50mA,
f=30MHz
-
Collector output capacitance
C_ob
V_CB=-10V, I_E=0, f=1MHz
-
* : h_FE rank / O : 100 ~ 200, Y : 160 ~ 320
Typ.
-
-
-
-
-
-
-
-0.2
150
20
(Ta=25°C)
Unit
V
V
V
A
W
°C
°C
(Ta=25°C)
Max. Unit
-
V
-
V
-
V
-0.1 µA
-0.1 µA
-0.1 µA
320
-
-0.8
V
-
MHz
30
pF
KST-8001-002
2