STA92N Datasheet, PDF (2/3 Pages) AUK corp – PNP Silicon Transistor

STA92N
Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Rating
-300
-300
-6
-500
400
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-emitter breakdown voltage BV_CEO I_C=-1mA, I_B=0
Collector cut-off current
I_CBO
V_CB=-300V, I_E=0
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
I_EBO
h_FE^*
V_CE(sat) ^*
V_BE(sat) ^*
V_BE
V_EB=-6V, I_C=0
V_CE=-10V, I_C=-30mA
I_C=-20mA, I_B=-2mA
I_C=-20mA, I_B=-2mA
V_CE=-10V, I_C=-30mA
Transition frequency
f_T
V_CE=-20V, I_C=-10mA
Collector output capacitance
C_ob
V_CB=-20V, I_E=0, f=1MHz
* : Pulse Tester : Pulse Width≤ 300 ㎲, Duty Cycle≤ 2.0%
(Ta=25°C)
Min. Typ. Max. Unit
-300 -
-
V
-
-
-0.1 µA
-
-
-0.1 µA
40
-
-
-
-
-
-0.5
V
-
-
-0.9
V
-
-0.7 -0.9
V
-
80
-
MHz
-
3
-
pF
KSD-T0C029-001
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