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SBT3906F_1 Datasheet, PDF (2/4 Pages) AUK corp – PNP Silicon Transistor
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SBT3906F
Absolute maximum ratings
Characteristic
Symbol
Ratings
Collector-Base voltage
VCBO
Collector-Emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Collector dissipation
PC*
Junction temperature
Tj
Storage temperature range
Tstg
* : Package mounted on 99.5% alumina 10×8×0.6mm
-40
-40
-5
-200
350
150
-55~150
Electrical Characteristics
Characteristic
Symbol
Test Condition
Min.
Collector-Base breakdown voltage
BVCBO IC=-10µA, IE=0
-40
Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0
-40
Emitter-Base breakdown voltage
BVEBO IE=-10µA, IC=0
-5
Collector cut-off current
ICEX
VCE=-30V, VEB=-3V
-
DC current gain
hFE
VCE=-1V, IC=-10mA
100
Collector-Emitter saturation voltage VCE(sat) IC=-50mA, IB=-5mA
-
Transition frequency
fT
VCE=-20V, IC=-10mA,
f=100MHz
250
Collector output capacitance
Cob
VCB=-5V, IE=0, f=1MHz
-
Delay time
Rise time
td
VCC=-3Vdc, VBE(off)=-0.5Vdc,
-
tr
IC=-10mAdc, IB1=-1mAdc
-
Storage time
Fall Time
ts
VCC=-3Vdc,IC=-10mAdc,
-
tf
IB1=IB2=-1mAdc
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Ta=25°C
Unit
V
V
V
mA
mW
°C
°C
Ta=25°C
Max. Unit
-
V
-
V
-
V
-50
nA
300
-
-0.4
V
-
MHz
4.5
pF
35
ns
35
ns
225
ns
75
ns
KST-2084-001
2
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