SBC546_1 Datasheet, PDF (2/3 Pages) AUK corp – NPN Silicon Transistor

SBC546
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Ratings
80
55
5
100
625
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Emitter breakdown voltage BV_CEO I_C=1mA, I_B=0
Base-Emitter turn on voltage
V_BE(ON) V_CE=5V, I_C=2mA
Base-Emitter saturation voltage
V_BE(sat) I_C=100mA, I_B=5mA
Collector-Emitter saturation voltage
V_CE(sat) I_C=100mA, I_B=5mA
Collector cut-off current
I_CBO
V_CB=35V, I_E=0
DC current gain
h_FE^*
V_CE=5V, I_C=2mA
Transition frequency
f_T
V_CE=5V, I_C=10mA
Collector output capacitance
Noise figure
C_ob
V_CB=10V, I_E=0, f=1MHz
NF
V_CE=5V, I_C=200µA,
f=1KHz, Rg=2KΩ
* : h_FE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800
Min.
55
550
-
-
-
110
-
-
Typ.
-
-
900
-
-
-
150
-
(Ta=25°C)
Max. Unit
-
V
700 mV
-
mV
600 mV
15
nA
800
-
-
MHz
4.5
pF
-
-
10
dB
KST-9024-000
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