NT332 Datasheet, PDF (2/4 Pages) AUK corp – PNP Silicon Transistor

Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Rating
-20
-20
-5
-50
50
150
-55~150
NT332
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
*: h_FE rank / Y : 120~240, G : 200~400
Symbol
BV_CEO
I_CBO
I_EBO
h_FE*
V_CE(sat)
V_BE
f_T
C_ob
Test Condition
I_C=-1mA, I_B=0
V_CB=-20V, I_E=0
V_EB=-5V, I_C=0
V_CE=-6V, I_C=-2mA
I_C=-50mA, I_B=-5mA
V_CE=-6V, I_C=-2mA
V_CE=-10V, I_C=-10mA
V_CB=-10V, I_E=0, f=1MHz
(Ta=25°C)
Min. Typ. Max. Unit
-20
-
-
V
-
-
-0.1 µA
-
-
-0.1 µA
120
-
400
-
-
- -0.15 V
-
-0.7 -0.9
V
-
200
-
MHz
-
4
-
pF
KSD-T5G002-000
2