BC856UF Datasheet, PDF (2/3 Pages) AUK corp – PNP Silicon Transistor (General purpose application Switching application)

BC856UF
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Ratings
-80
-55
-5
-100
200
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Emitter breakdown voltage BV_CEO I_C=-1mA, I_B=0
Base-Emitter turn on voltage
V_BE(ON) V_CE=-5V, I_C=-2mA
Base-Emitter saturation voltage
V_BE(sat) I_C=-100mA, I_B=-5mA
Collector-Emitter saturation voltage V_CE(sat) I_C=-100mA, I_B=-5mA
Collector cut-off current
DC current gain
I_CBO
h_FE^*
V_CB=-35V, I_B=0
V_CE=-5V, I_B=-2mA
Transition frequency
f_T
V_CB=-5V, I_C=-10mA
Collector output capacitance
Noise figure
C_ob
V_CB=-10V, I_E=0, f=1MHz
NF
V_CE=-5V, I_C=-200µA,
f=1KHz,Rg=2KΩ
* : h_FE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800
Min.
-55
-
-
-
-
110
-
-
Typ.
-
-
-900
-
-
-
150
-
(Ta=25°C)
Max. Unit
-
V
-700 mV
-
mV
-650 mV
-15
nA
800
-
-
MHz
4.5
pF
-
-
10
dB
KST-3038-001
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