2SC5345 Datasheet, PDF (2/4 Pages) AUK corp – NPN Silicon Transistor (RF amplifier)

Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Ratings
30
20
4
20
625
150
-55~150
2SC5345
Ta=25°C
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BV_CBO I_C=10µA, I_E=0
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE*
I_C=5mA, I_B=0
I_E=10µA, I_C=0
V_CB=30V, I_E=0
V_EB=4V, I_C=0
V_CE=6V, I_C=1mA
Collector-Emitter saturation voltage V_CE(sat) I_C=10mA, I_B=1mA
Transition frequency
Collector output capacitance
f_T
V_CE=6V, I_E=-1mA
C_ob
V_CB=6V, I_E=0, f=1MHz
* : h_FE rank / R : 40~80, O : 70~140, Y : 120~240
Min.
30
20
4
-
-
40
-
-
-
Typ.
-
-
-
-
-
-
-
550
1.4
Ta=25°C
Max. Unit
-
V
-
V
-
V
0.5
µA
0.5
µA
240
-
0.3
V
-
MHz
-
pF
KST-9007-001
2