2N5551N Datasheet, PDF (2/4 Pages) AUK corp – NPN Silicon Transistor

2N5551N
Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Rating
180
160
6
600
400
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
BV_CEO
I_CBO
I_EBO
I_C=1mA, I_B=0
V_CB=180V, I_E=0
V_EB=6V, I_C=0
DC current gain
h_{FE (1)}
V_CE=5V, I_C=1mA
DC current gain
h_{FE (2)}
V_CE=5V, I_C=10mA
DC current gain
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
h_{FE (3)}
V_CE(sat)(1)^*
V_CE(sat)(2)^*
V_BE(sat)(1)^*
V_CE=5V, I_C=50mA
I_C=10mA, I_B=1mA
I_C=50mA, I_B=5mA
I_C=10mA, I_B=1mA
Base-emitter saturation voltage
V_BE(sat)(2)* I_C=50mA, I_B=5mA
Base-emitter voltage
V_BE
V_CE=5V, I_C=10mA
Transition frequency
f_T
V_CE=10V, I_C=10mA
Collector output capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
* : Pulse Tester : Pulse Width ≤300µs, Duty Cycle ≤2.0%
(Ta=25°C)
Min. Typ. Max. Unit
160
-
-
V
-
-
100 nA
-
-
100 nA
80
-
-
80
-
250
-
30
-
-
-
-
0.2
V
-
-
0.5
V
-
-
1
V
-
-
1
V
-
0.65 0.85
V
-
150
-
MHz
-
3
-
pF
KSD-T0C035-001
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