2N5551 Datasheet, PDF (2/3 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

2N5551
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Ratings
180
160
6
600
625
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BV_CBO
I_C=100µA, I_E=0
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
BV_CEO
BV_EBO
I_C=1mA, I_B=0
I_E=10µA, I_C=0
Collector cut-off current
I_CBO
V_CB=120V, I_E=0
Emitter cut-off current
I_EBO
V_EB=4V, I_C=0
DC current gain
h_{FE (1)}
V_CE=5V, I_C=1mA
DC current gain
h_{FE (2)}
V_CE=5V, I_C=10mA
DC current gain
Collector-Emitter saturation voltage
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
h_{FE (3)}
V_CE(sat)(1)^*
V_CE(sat)(2)^*
V_BE(sat)(1)^*
V_BE(sat)(2)*
f_T
V_CE=5V, I_C=50mA
I_C=10mA, I_B=1mA
I_C=50mA, I_B=5mA
I_C=10mA, I_B=1mA
I_C=50mA, I_B=5mA
V_CE=10V, I_C=10mA
Collector output capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
* : Pulse Tester : Pulse Width ≤300µs, Duty Cycle ≤2.0%
(Ta=25°C)
Min. Typ. Max. Unit
180
-
-
V
160
-
-
V
6
-
-
V
-
-
100 nA
-
-
100 nA
80
-
-
80
-
250
-
30
-
-
-
-
0.2
V
-
-
0.5
V
-
-
1
V
-
-
1
V
100
-
400 MHz
-
-
6
pF
KST-9041-000
2