2N5401 Datasheet, PDF (2/3 Pages) NXP Semiconductors – PNP high-voltage transistor

2N5401
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Ratings
-160
-150
-5
-600
625
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BV_CBO
I_C=-100µA, I_E=0
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
BV_CEO
BV_EBO
I_C=-1mA, I_B=0
I_E=-10µA, I_C=0
Collector cut-off current
I_CBO
V_CB=-120V, I_E=0
Emitter cut-off current
I_EBO
V_EB=-3V, I_C=0
DC current gain
h_{FE (1)}
V_CE=-5V, I_C=-1mA
DC current gain
h_{FE (2)}
V_CE=-5V, I_C=-10mA
DC current gain
Collector-Emitter saturation voltage
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
h_{FE (3)}
V_CE(sat)(1)^*
V_CE(sat)(2)^*
V_BE(sat)(1)^*
V_BE(sat)(2)*
f_T
V_CE=-5V, I_C=-50mA
I_C=-10mA, I_B=-1mA
I_C=-50mA, I_B=-5mA
I_C=-10mA, I_B=-1mA
I_C=-50mA, I_B=-5mA
V_CE=-10V, I_C=-10mA
Collector output capacitance
C_ob
V_CB=-10V, I_E=0, f=1MHz
* : Pulse Tester : Pulse Width ≤300µs, Duty Cycle ≤2.0%
(Ta=25°C)
Min. Typ. Max. Unit
-160 -
-
V
-150 -
-
V
-5
-
-
V
-
-
-100 nA
-
-
-100 nA
50
-
-
60
-
240
-
50
-
-
-
-
-0.2
V
-
-
-0.5
V
-
-
-1
V
-
-
-1
V
100
-
400 MHz
-
-
6
pF
KST-9040-000
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